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 US1A thru US1M
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Ultrafast reverse recovery time * Low switching losses, high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM trr VF TJ max. 1.0 A 50 V to 1000 V 30 A 50 ns, 75 ns 1.0 V, 1.7 V 150 C
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 110 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating and storage temperature range VRRM VRMS VDC IF(AV) IFSM TJ, TSTG SYMBOL US1A UA 50 35 50 US1B UB 100 70 100 US1D UD 200 140 200 US1G UG 400 280 400 1.0 30 - 55 to + 150 US1J UJ 600 420 600 US1K UK 800 560 800 US1M UM 1000 700 1000 V V V A A C UNIT
Document Number: 88768 Revision: 27-Aug-07
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com 1
US1A thru US1M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage (1) Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TEST CONDITIONS 1.0 A TA = 25 C TA = 100 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF IR trr CJ 50 15 US1A US1B US1D US1G US1J US1K 1.7 10 50 75 10 US1M UNIT V A ns pF 1.0
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Maximum thermal resistance (1) Note: (1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area SYMBOL RJA RJL US1A US1B US1D US1G 75 27 US1J US1K US1M UNIT C/W
ORDERING INFORMATION (Example)
PREFERRED P/N US1J-E3/61T US1J-E3/5AT US1JHE3/61T (1) US1JHE3/5AT (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT 61T 5AT BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
1.2 30
Average Forward Rectified Current (A)
1.0
Peak Forward Surge Current (A)
Resistive or Inductive Load
25
TL = 110 C 8.3 ms Single Half Sine-Wave
0.8
20
0.6
15
0.4 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas
10
0.2
5
0 0 25 50 75 100 125 150
0 1 10 100
Lead Temperature (C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88768 Revision: 27-Aug-07
US1A thru US1M
Vishay General Semiconductor
100
1000
Instantaneous Forward Current (A)
Instantaneous Reverse Leakage Current (A)
TJ = 150 C 100 TJ = 125 C
10 TJ = 125 C 1
TJ = 150 C
10
TJ = 100 C
TJ = 100 C 0.1 TJ = 25 C 0.01 0.3 US1A - US1G
1 US1J - US1M 0.1 TJ = 25 C
0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
100
100 TJ = 150 C US1A - US1G TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p
Instantaneous Reverse Leakage Current (A)
10
TJ = 125 C
1
TJ = 100 C
Junction Capacitance (pF)
10
US1J - US1M
0.1
US1A - US1G TJ = 25 C
0.01 0 20 40 60 80 100
1 0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 7. Typical Junction Capacitance
100
100
TJ = 150 C 10 TJ = 125 C
Transient Thermal Impedance (C/W)
3.2
Instantaneous Forward Current (A)
10
1 TJ = 100 C 0.1 TJ = 25 C US1J - US1M 0.01 0.2
1
0.7
1.2
1.7
2.2
2.7
0.1 0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 5. Typical Instantaneous Forward Characteristics
Figure 8. Typical Transient Thermal Impedance
Document Number: 88768 Revision: 27-Aug-07
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com 3
US1A thru US1M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68) MIN. 0.074 (1.88) MAX.
0.065 (1.65) 0.049 (1.25)
0.110 (2.79) 0.100 (2.54)
0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
0.060 (1.52) MIN. 0.208 (5.28) REF.
0.090 (2.29) 0.078 (1.98)
0.060 (1.52) 0.030 (0.76)
0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93)
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88768 Revision: 27-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


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